AN4544 datasheet(21/35 Pages) STMICROELECTRONICS

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AN4544

Datasheet explanation

2.5.4

Gate-to-emitter leakage current (IGES)

This is the gate-emitter leakage current specified at the recommended gate-emitter voltage

(VGE) with collector-emitter shorted (VCE = 0) and TJ = 25 °C.

2.5.5

Gate-to-emitter threshold voltage (VGE(th))

This is the minimum gate to emitter voltage required to turn on the IGBT at specified IC and

VCE.

VGE(th) limits are indicated in Table 8 and to turn on IGBT a higher voltage than VGE(th) has

to be applied.

The following diagram shows the variation of the normalized threshold versus temperature

Figure 17. Normalized VGE(th) vs junction temperature

The VGE(th) value decreases by a factor of approximately: -2.2 mV/°C.

2.6

Dynamic characteristics

VGE(th)

0.8

0.6

-50

(norm)

TJ(°C)

0.7

0.9

1.0

100

150

VCE=VGE

IC=1mA

AM17395v1

Table 9. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-5400

Coes

Output capacitance

220

Cres

Reverse transfer

capacitance

-180

Total gate charge

VCC = 480 V, IC = 40 A,

VGE = 15 V

-226

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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