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LT1160/LT1162

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APPLICATIO S

FEATURES

DESCRIPTIO

TYPICAL APPLICATIO

Half-/Full-Bridge

N-Channel

Power MOSFET Drivers

■

Floating Top Driver Switches Up to 60V

above Load HV Supply

■

180ns Transition Times Driving 10,000pF

Shoot-Through

■

Top Drive Protection at High Duty Cycles

■

Operates at Supply Voltages from 10V to 15V

The LT

N-channel power MOSFET drivers. The floating driver can

drive the topside N-channel power MOSFETs operating off

a high voltage (HV) rail of up to 60V.

The internal logic prevents the inputs from turning on the

power MOSFETs in a half-bridge at the same time. Its

unique adaptive protection against shoot-through cur-

rents eliminates all matching requirements for the two

MOSFETs. This greatly eases the design of high efficiency

motor control and switching regulator systems.

During low supply or start-up conditions, the undervoltage

lockout actively pulls the driver outputs low to prevent the

power MOSFETs from being partially turned on. The 0.5V

hysteresis allows reliable operation even with slowly vary-

ing supplies.

The LT1162 is a dual version of the LT1160 and is available

in a 24-pin PDIP or in a 24-pin SO Wide package.

■

Synchronous Step-Down Switching Regulators

■

Class D Power Amplifiers

UV OUT

IN TOP

IN BOTTOM

14

13

12

11

9

8

1

10

4

2

3

BOOST

T GATE DR

T GATE FB

T SOURCE

B GATE DR

B GATE FB

LT1160

1N4148

HV = 60V MAX

1

µF

10

µF

25V

12V

PWM

0Hz TO 100kHz

1160 TA01

IRFZ44

IRFZ44

56

1000

µF

100V

SGND

PGND

IN TOP IN BOTTOM T GATE DR B GATE DR

LL

L

L

LH

L

H

HL

H

L

HH

L

L

+

, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.

All other trademarks are the property of their respective owners.