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PM0075 データシート(PDF) 18 Page - STMicroelectronics |
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PM0075 データシート(HTML) 18 Page - STMicroelectronics |
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18 / 31 page ![]() Reading/programming the embedded Flash memory PM0075 18/31 Doc ID 17863 Rev 2 ● All features linked to loading code into and executing code from the embedded SRAM are still active (JTAG/SWD and boot from embedded SRAM) and this can be used to disable the read protection. When the read protection option byte is altered to a memory-unprotect value, a mass erase is performed. ● When booting from the embedded SRAM, Flash memory accesses through the code and through data read using DMA1 and DMA2 are not allowed. ● Flash memory access through data read using JTAG, SWV (serial wire viewer), SWD (serial wire debug), ETM and boundary scan are not allowed. The Flash memory is protected when the RDP option byte and its complement contain the pair of values shown in Table 6. Note: Erasing the option byte block will not trigger a mass erase as the erased value (0xFF) corresponds to a protected value. Unprotection To disable the read protection from the embedded SRAM: ● Erase the entire option byte area. As a result, the read protection code (RDP) will be 0xFF. At this stage the read protection is still enabled. ● Program the correct RDP code 0x00A5 to unprotect the memory. This operation first forces a Mass Erase of the main Flash memory. ● Reset the device (POR Reset) to reload the option bytes (and the new RDP code) and, to disable the read protection. Note: The read protection can be disabled using the boot loader (in this case only a System Reset is necessary to reload the option bytes). For more details refer to AN2606. 2.4.2 Write protection In high-density and connectivity line devices, from page 0 to page 61, write protection is implemented with a granularity of two pages at a time. The remaining memory block (from page 62 to page 255 in high-density devices, and from page 62 to page 127 in connectivity line devices) is write-protected at once. In low- and medium-density devices, write protection is implemented with a granularity of four pages at a time. If a program or an erase operation is performed on a protected page, the Flash memory returns a protection error flag on the Flash memory Status Register (FLASH_SR). The write protection is activated by configuring the WRP[3:0] option bytes, and then by applying a system reset to reload the new WRPx option bytes. Table 6. Flash memory protection status RDP byte value RDP complement value Read protection status 0xFF 0xFF Protected RDPRT Complement of RDP byte Not protected Any value Not the complement value of RDP Protected |
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