SDT02N02 datasheet(1/7 Pages) SAMHOP

部品番号	SDT02N02

部品情報	S uper high dense cell design for low R DS (ON).

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メーカー	SAMHOP [SamHop Microelectronics Corp.]

ホームページ	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

SDT02N02

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (

Ω) Typ

200V

2A

2.5 @ VGS=10V

N-Channel Enhancement Mode Field Effect Transistor

www.samhop.com.tw

Jun,07,2012

1

Details are subject to change without notice.

Ver 1.0

Green

Product

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

200

2

13

V

±30

Gate-Source Voltage

Drain-Source Voltage

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

a

A

42

W

PD

°C

2.98

-55 to 175

°C/W

TA=25°C

THERMAL CHARACTERISTICS

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

TA=25°C

S urface Mount P ackage.

FE AT UR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

G

D

S

G

S

SOT-223

同様の部品番号 - SDT02N02

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Infineon Technologies A...	SDT02S60	204Kb / 8P	Silicon Carbide Schottky Diode Rev. 2.0 2004-03-22

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