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STM4615 データシート(PDF) 2 Page - SamHop Microelectronics Corp.

部品番号 STM4615
部品情報  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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メーカー  SAMHOP [SamHop Microelectronics Corp.]
ホームページ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4615 データシート(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-40
V
-1
IGSS
±10
uA
VGS(th)
-1
V
gFS
40
S
CISS
3500
pF
COSS
480
pF
CRSS
420
pF
Qg
55
nC
90
nC
Qgs
200
nC
Qgd
88
tD(ON)
85
ns
tr
8
ns
tD(OFF)
22
ns
tf
ns
Gate-Drain Charge
VDS=-20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-20V
ID=-1A
VGS=-10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-20V,ID=-12.5A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-12.5A
VDS=-10V , ID=-12.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-250uA
VDS= -32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=-4.5V , ID=-10A
10.5
16
m ohm
f=1.0MHz
c
VDS=-20V,ID=-12.5A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Ver 1.0
www.samhop.com.tw
Aug,02,2010
2
nC
VDS=-20V,ID=-12.5A,VGS=-4.5V
42
c
8.5
12
-1.7
-3
STM4615
VSD
Diode Forward Voltage
VGS=0V,IS=-2A
-0.76
-1.2
V
_
_
_
b
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)



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