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STP652F データシート(PDF) 3 Page - SamHop Microelectronics Corp.

部品番号 STP652F
部品情報  Super high dense cell design for extremely low RDS(ON).
PDF  7 Pages
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メーカー  SAMHOP [SamHop Microelectronics Corp.]
ホームページ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STP652F データシート(HTML) 3 Page - SamHop Microelectronics Corp.

  STP652F Datasheet HTML 1Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 2Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 3Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 4Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 5Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 6Page - SamHop Microelectronics Corp. STP652F Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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STP652F
Ver 1.1
www.samhop.com.tw
Oct,27,2010
3
Tj( °
C)
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C)
Figure 3. On-Resistance vs. Drain Current
Figure 4. On-Resistance Variation with Drain
Tj, Junction Temperature(° C)
Figure 5. Gate Threshold Variation
Tj, Junction Temperature(° C)
Figure 6. Breakdown Voltage Variation
and Gate Voltage
Current and Temperature
with Temperature
with Temperature
0
35
28
21
14
7
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS =3.5V
VGS =10V
VGS =4V
VGS =4.5V
30
24
18
12
6
0
0
0.9
5.4
4.5
3.6
2.7
1.8
Tj=125 C
25 C
-55 C
60
50
40
30
20
10
1
1
714
21
28
35
V GS =10V
V GS =4.5V
2.0
1.8
1.6
1.4
1.2
1.0
0
0
100
75
25
50
125
15
V GS =10V
ID=14.5A
V GS =4.5V
ID=11A
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
125 150
100
75
50
25
0
-25
-50
V DS =V GS
ID=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
125 150
100
75
50
25
0
-25
-50
ID=250uA



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