STP656F datasheet(1/7 Pages) SAMHOP

部品番号	STP656F

部品情報	Super high dense cell design for low RDS(ON).

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メーカー	SAMHOP [SamHop Microelectronics Corp.]

ホームページ	http://www.samhop.com.tw

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SmHop Microelectronics C rp.

a

STP656F

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

TO-220F Package.

N-Channel Enhancement Mode Field Effect Transistor

www.samhop.com.tw

Dec,01,2010

1

Details are subject to change without notice.

S

G

D

Ver 1.0

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m ) Max

60V

22A

29

@

VGS=4.5V

19

@

VGS=10V

GDS

STF SERIES

TO-220F

Gr

P

Pr

P

Symbol

VDS

VGS

IDM

EAS

6

65

W

A

PD

°C

21

-55 to 150

ID

Units

Parameter

60

22

66

°C/W

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

°C/W

182

mJ

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

TC=25°C

-Pulsed

b

A

Avalanche Energy

d

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

R JA

A

17.7

TC=70°C

13.3

W

a

o

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