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STUD334S データシート(PDF) 2 Page - SamHop Microelectronics Corp.

部品番号 STUD334S
部品情報  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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メーカー  SAMHOP [SamHop Microelectronics Corp.]
ホームページ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD334S データシート(HTML) 2 Page - SamHop Microelectronics Corp.

  STUD334S Datasheet HTML 1Page - SamHop Microelectronics Corp. STUD334S Datasheet HTML 2Page - SamHop Microelectronics Corp. STUD334S Datasheet HTML 3Page - SamHop Microelectronics Corp. STUD334S Datasheet HTML 4Page - SamHop Microelectronics Corp. STUD334S Datasheet HTML 5Page - SamHop Microelectronics Corp. STUD334S Datasheet HTML 6Page - SamHop Microelectronics Corp. STUD334S Datasheet HTML 7Page - SamHop Microelectronics Corp. STUD334S Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±100
nA
VGS(th)
V
3.8
gFS
S
CISS
2060
pF
COSS
323
pF
CRSS
255
pF
Qg
31
nC
32
106
17
tD(ON)
29
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=15V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=30A
VDS=10V , ID=30A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=24V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=25A
4.7
5.1
6.8
m ohm
b
f=1.0MHz
b
STU/D334S
Ver 1.0
www.samhop.com.tw
Jul,19,2012
2
VSD
nC
Qgs
nC
Qgd
2.7
9
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=15V,ID=30A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=6A
0.78
1.3
V
Notes
nC
13.5
VDS=15V,ID=30A,VGS=10V
VDS=15V,ID=30A,VGS=4.5V
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
_
_
1.0
1.6
3
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