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STUD339S データシート(PDF) 2 Page - SamHop Microelectronics Corp.

部品番号 STUD339S
部品情報  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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メーカー  SAMHOP [SamHop Microelectronics Corp.]
ホームページ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD339S データシート(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±100
nA
VGS(th)
V
8.2
gFS
S
CISS
900
pF
COSS
161
pF
CRSS
124
pF
Qg
17
nC
18
18
46
tD(ON)
14
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=15V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=20A
VDS=10V , ID=20A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=24V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=16A
9.6
11.5
15
m ohm
b
f=1.0MHz
b
STU/D339S
Ver 1.0
www.samhop.com.tw
Aug,17,2012
2
VSD
nC
Qgs
nC
Qgd
1.8
4.1
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=15V,ID=20A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2A
0.77
1.3
V
Notes
nC
6.5
VDS=15V,ID=20A,VGS=10V
VDS=15V,ID=20A,VGS=4.5V
a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
_
_
1.0
1.7
3
55



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