WFF2N60 datasheet(4/6 Pages) WISDOM

4 / 6 page

HIGH VOLTAGE

N-Channel MOSFET

Rev.A0,August , 2010 |

Typical Characteristics (Continued)

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μ A

J, Junction Temperature [

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※Notes:

1. V

GS = 10 V

2. I

D = 2.5 A

J, Junction Temperature [

-2

-1

100 ms

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

2. T

J = 150

3. Single Pulse

DS, Drain-Source Voltage [V]

100

125

150

0.0

0.4

0.8

1.2

1.6

2.0

2.4

, Case Temperature [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maximum Safe Operating Area

for WFF2N60

-5

-4

-3

-2

-1

-2

-1

※ No te s :

1 . Z

θ JC (t ) = 5 . 5

℃ /W M a x .

2 . D u ty F a c to r , D = t

1 /t2

3 . T

JM - T C = P DM * Z θ JC (t )

sin g le p u lse

D= 0 . 5

0. 02

0. 2

0. 05

0. 1

0. 01

1 , S q u a re W a v e P u l s e D u ra ti o n [s e c ]

PDM

Figure 11-2. Transient Thermal Response Curve for WFF2N60

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