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RFPA2005 データシート(PDF) 2 Page - RF Micro Devices |
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RFPA2005 データシート(HTML) 2 Page - RF Micro Devices |
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2 / 9 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS141031 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 2 of 9 Absolute Maximum Ratings Parameter Rating Unit DC Supply Voltage, VCC1, VCC2 (POUT <24dBm, VSWR < 5:1) 4.5 VDC Enable Control Logic, VEN +2.2 VDC CW Maximum RF Input Power into 50 Ω Load (VCC =3.3V) +15 dBm Storage Temperature Range -40 to +150 °C Moisture Sensitivity Level (260° JEDEC J-STD-020) MSL3 Modulated (WCDMA) Input Power 6:1 Output VSWR (VCC =3.3V) +10 dBm ESD Rating, All Pins, HBM, JESD22-A114 2000 V ESD Rating, All Pins, CDM, JESD22-C101 1000 V Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Recommended Operating Condition Parameter Specification Unit Min Typ Max Operating Temperature Range -40 +85 °C Operating Junction Temperature 165 °C Power Supply VCC1, VCC2, 3.15 3.3 3.45 V Power Supply Vbias 3.3 3.3 3.45 V Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Operating Frequency Range 1805 2170 MHz General Performance VEN Range (Logic Low) 0 0.4 V VEN Range (Logic High) 1.4 1.9 V VEN Enable Current 0.2 mA VEN = 1.8V Total Idle Current (ICQ) 135 mA DC only, VCC1 = VCC2 = 3.3V, VBIAS = 3.3V, VEN = 1.8V VBIAS Current 5 9 mA DC only, VEN = 1.8V DC Enable Time 7 µs DC only, time from VEN = high to stable idle current (90% of steady state value) RF Rise / Fall Time 2 µs POUT ≤ 24dBm, 90% of target, DC settled prior to RF Electrical Performance: Band 4 Unless otherwise specified; Temp = +25°C, VCC1, VCC2 = +3.3V, VBias=+3.3V, VEN = +1.8V, POUT = 24dBm, 2110MHz < F < 2170MHz, 50 Ω system, 20MHz LTE DL with CFR 8dB Gain 25 26.5 dB |
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