RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS141021

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES

trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.

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RFPD2650

GaAs/GaN Power Doubler Hybrid

45MHz to 1003MHz

The RFPD2650 is a Hybrid Power Doubler amplifier module.

The part employs GaAs pHEMT die and GaN HEMT die, has

extremely high output capability, and is operated from 45MHz

to 1003MHz. It provides excellent linearity and superior return

loss performance with low noise and optimal reliability. DC

current of the device can be externally adjusted for optimum

distortion performance versus power consumption over a wide

range of output level.

INPUT

OUTPUT

V+

Current setting

Package: SOT-115J

Features

■

Excellent Linearity

■

Superior Return Loss Performance

■

Extremely Low Distortion

■

Optimal Reliability

■

Low Noise

■

Unconditionally Stable Under All

Terminations

■

Extremely High Output Capability

■

22.5dB Min. Gain at 1003MHz

■

■

Extra Pin For Current Adjustment

Applications

■

45MHz to 1003MHz CATV

Amplifier Systems

Ordering Information

RFPD2650

Box with 50 Pieces

Absolute Maximum Ratings

Parameter

Rating

Unit

RF Input Voltage (single tone)

75

dBmV

DC Supply Over-Voltage (5 minutes)

30

V

Storage Temperature

-40 to +100

°C

Operating Mounting Base Temperature

-30 to +100

°C

Caution! ESD sensitive device.

RoHS (Restriction of Hazardous

Substances): Compliant per EU Directive

2011/65/EU.

Exceeding any one or a combination of the Absolute

Maximum Rating conditions may cause permanent

damage to the device. Extended application of Absolute

Maximum Rating conditions to the device may reduce

device reliability. Specified typical performance or

functional operation of the device under Absolute

Maximum Rating conditions is not implied.

RFPD2650