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IRF7201TRPBF. データシート(PDF) 1 Page - International Rectifier |
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IRF7201TRPBF. データシート(HTML) 1 Page - International Rectifier |
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1 / 7 page  Parameter Max. Units VDS Drain- Source Voltage 30 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 7.3 ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 5.8 A IDM Pulsed Drain Current 58 PD @TC = 25°C Power Dissipation 2.5 PD @TC = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V EAS Single Pulse Avalanche Energy 70 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C HEXFET® Power MOSFET Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. VDSS = 30V RDS(on) = 0.030Ω l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free IRF7201PbF Description Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A 9/30/04 Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient ––– 50 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 SO-8 PD- 95022 |
同様の部品番号 - IRF7201TRPBF. |
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同様の説明 - IRF7201TRPBF. |
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