5/13/04

IRF7606PbF

Absolute Maximum Ratings

www.irf.com

1

Thermal Resistance

Parameter

Max.

Units

Maximum Junction-to-Ambient

„

70

°C/W

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The new Micro8 package, with half the footprint area

of the standard SO-8, provides the smallest footprint

available in an SOIC outline. This makes the Micro8

an ideal device for applications where printed circuit

board space is at a premium. The low profile (<1.1mm)

of the Micro8 will allow it to fit easily into extremely thin

application environments such as portable electronics

and PCMCIA cards.

Micro8

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

Description

Top View

8

1

2

3

4

5

6

7

D

D

D

G

S

A

D

S

S

Parameter

Max.

Units

Drain-Source Voltage

-30

V

-3.6

-2.9

A

Pulsed Drain Current



-29

Maximum Power Dissipation

„

1.8

W

Maximum Power Dissipation

„

1.1

W

Linear Derating Factor

14

mW/°C

Gate-to-Source Voltage

± 20

V

Gate-to-Source Voltage Single Pulse tp<10µS

30

V

dv/dt

Peak Diode Recovery dv/dt

‚

-5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Soldering Temperature, for 10 seconds

240 (1.6mm from case)

PD - 95245