GaAs SP4T Absorptive Switch, DC - 3 GHz

SW-314

Specifications subject to change without notice.

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V 4.00

2

Functional Schematic

Absolute Maximum Ratings

3,4

3. Operation of this device above any one of these parameters

may cause permanent damage.

4. When the input power is applied to the terminated port, the

absolute maximum is +30 dBm.

5. Standard CMOS TTL interface, latch-up will occur if logic

signal is applied prior to power supply.

Parameter

Absolute Maximum

Max Input Power

0.05 GHz

0.5 - 3.0 GHz

4

+27 dBm

+34 dBm

Bias Voltages

Vcc

Vee

-0.5 to +5.5V

-8.5V to +0.5V

Control Voltage

5

-0.5V, to Vcc +0.5V

Operating Temperature

-55°C to +125°C

Storage Temperature

-65°C to +150°C

Parameter

Test Conditions

Frequency

Units

Min

Typ

Max

IP3

2

Two-Tone Input Power up to +5 dBm

0.05 GHz

0.5 GHz to 3 GHz

dBm

dBm

—

—

+35

+46

—

—

IP2

Two-Tone Input Power up to +5 dBm

0.05 GHz

0.5 GHz to 3 GHz

dBm

dBm

—

—

+45

+60

—

—

Vcc

—

—

V

4.5

5.0

5.5

Vee

—

—

V

-8.0

—

-5.0

Icc

Vcc = 4.5 to 5.5 V

Vctl = 0 to 0.8V, or Vcc –2.1V to Vcc

—

mA

—

0.2

4.0

Iee

Vee = -5.0V to -8.0V

—

mA

—

0.1

1.0

Vctl

Vctl

Logic 0 (TTL)

Logic 1 (TTL)

—

—

V

V

0.0

2.0

—

—

0.8

5.0

Input Leakage

Current (Low)

0 to 0.8V

—

µA

—

—

1.0

Input Leakage

Current (High)

2.0 to 5.0V

—

µA

—

—

1.0

Electrical Specifications (From –55°C to +85°C)

Truth Table

TTL Control Inputs

Condition of Switch

C1

C2

C3

C4

RF1

RF2

RF3

RF4

1

0

0

0

On

Off

Off

Off

0

1

0

0

Off

On

Off

Off

0

0

1

0

Off

Off

On

Off

0

0

0

1

Off

Off

Off

On

RF Common to Each RF Port

0 = TTL Low

1 = TTL High

PIN 13 C3

C4

GND

GND

GND

RF3

GND

GND

C1

Vcc

Vee

GND

RF2

GND

C2 PIN 12

GND

RF1

GND

GND

RFC PIN 1

RF4

GND

GND

PIN 24 GND