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P4C1281 データシート(PDF) 3 Page - Pyramid Semiconductor Corporation

部品番号 P4C1281
部品情報  ULTRA HIGH SPEED 64K X 4 cmos STATIC RAMS
PDF  11 Pages
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メーカー  PYRAMID [Pyramid Semiconductor Corporation]
ホームページ  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1281 データシート(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C1281/P4C1282 - ULTRA HIGH SPEED 64K x 4 CMOS STATIC RAMS
Page 3
Document # SRAM136 REV OR
POWER DISSIPATIOn CHARACTERISTICS VS. SPEED
Sym Parameter
Temperature Range
-12
-15
-20
-25
-35
-45
Unit
I
CC
Dynamic Operating Current*
Commercial
170
160
155
150
N/A
N/A
mA
Industrial
N/A
170
160
155
150
N/A
mA
Military
N/A
N/A
160
155
150
145
mA
* V
CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
Sym Parameter
-12
-15
-20
-25
-35
-45
Unit
Min Max Min Max Min Max Min Max Min Max Min Max
t
RC
Read Cycle Time
12
15
20
25
35
45
ns
t
AA
Address Access Time
12
15
20
25
35
45
ns
t
AC
Chip Enable Access Time
12
15
20
25
35
45
ns
t
OH
Output Hold from Address Change
2
2
2
2
2
2
ns
t
LZ
Chip Enable to Output in Low Z
2
2
2
2
2
2
ns
t
HZ
Chip Disable to Output in High Z
7
8
10
10
15
15
ns
t
PU
Chip Enable to Power Up Time
0
0
0
0
0
0
ns
t
PD
Chip Disable to Power Down
12
15
20
25
25
30
ns
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
TIMIng WAVEFORM OF READ CYCLE nO. 1 (ADDRESS COnTROLLED) (5,6)
TIMIng WAVEFORM OF READ CYCLE nO. 2 (CE COnTROLLED) (5,7,8)



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