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IRFS7440PBF データシート(PDF) 2 Page - International Rectifier |
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IRFS7440PBF データシート(HTML) 2 Page - International Rectifier |
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2 / 12 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 IRFS7440PbF/IRFSL7440PbF Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.048mH RG = 50Ω, IAS = 100A, VGS =10V. ISD ≤ 100A, di/dt ≤ 1330A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. Rθ is measured at TJ approximately 90°C. Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 34A, VGS =10V. Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ EAS (Thermally limited) Single Pulse Avalanche Energy k IAR Avalanche CurrentÃd A EAR Repetitive Avalanche Energy d mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.72 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 °C/W A °C 300 238 See Fig. 14, 15, 22a, 22b 208 Max. 208 147 772 120 560 -55 to + 175 ± 20 1.4 10lbfx in (1.1Nx m) Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.0 2.5 m Ω ––– 3.0 ––– m Ω VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 2.6 ––– Ω Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 5.0mA d VGS = 10V, ID = 100A g VGS = 6.0V, ID = 50A g VGS = -20V VDS = 40V, VGS = 0V VDS = VGS, ID = 100μA VGS = 20V VDS = 40V, VGS = 0V, TJ = 125°C |
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