10N30

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-738.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

300

V

Gate-Source Voltage

±30

V

Drain Current

10

A

Pulsed (Note 2)

40

A

Avalanche Current (Note 2)

11

A

Avalanche Energy

Single Pulsed (Note 3)

360

mJ

Repetitive (Note 4)

13.5

mJ

Power Dissipation

TO-220

135

W

TO-251/TO-252

83

Derate above 25°C

TO-220

1.07

W/°C

TO-251/TO-252

0.66

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220

0.93

°C/W

TO-251/TO-252

1.5

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

300

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.5 0.65

Ω

DYNAMIC PARAMETERS

Input Capacitance

840 1090 pF

Output Capacitance

250 325

pF

Reverse Transfer Capacitance

80

110

pF