PJS6414 datasheet(1/6 Pages) PANJIT

部品番号	PJS6414

部品情報	20V N-Channel Enhancement Mode MOSFET

PDF	6 Pages

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メーカー	PANJIT [Pan Jit International Inc.]

ホームページ	http://www.panjit.com.tw

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1 / 6 page

PPJS6414

December 31,2014-REV.02

Page 1

20V N-Channel Enhancement Mode MOSFET

Voltage

20 V

Current

6.6A

SOT-23 6L-1

Unit : inch(mm)

Features



RDS(ON) , VGS@4.5V, ID@6.6A<36m

Ω



RDS(ON) , VGS@2.5V, ID@4.1A<52m

Ω



RDS(ON) , VGS@1.8V, ID@1.9A<92m

Ω



Advanced Trench Process Technology



Specially Designed for Switch Load, PWM Application, etc..



Lead free in compliance with EU RoHS 2011/65/EU

directive.



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-23 6L-1 Package



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.0005 ounces, 0.014 grams



Marking: S14

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

+12

V

Continuous Drain Current

ID

6.6

A

Pulsed Drain Current

IDM

26.4

A

Power Dissipation

Ta=25

oC

PD

2

W

Derate above 25

oC

16

mW/

oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal resistance

-

Junction to Ambient

(Note 3)

RθJA

62.5

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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