C6084

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-039.J



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

1.4

KV

Collector-Emitter Voltage

800

V

Emitter-Base Voltage

5

V

Collector Current

TO-3P/TO-263

TO-220/TO-220F

TO-220F1/TO-220F2

5

A

TO-126

3

TO-3P/TO-263

TO-220/TO-220F

TO-220F1/TO-220F2

12

A

TO-126

6

Collector Dissipation

TO-126

1.25

W

TO-3P

3.125

TO-220/ TO-263

1.75

TO-220F

1.35

TO-220F1/TO-220F2

1.45

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Cutoff Current

10

µA

Collector Cutoff Current

1.0

mA

Collector Sustain Voltage

800

V

Emitter Cutoff Current

1.0

mA

Collector-Emitter

Saturation Voltage

TO-220/TO-220F/TO-220F1

TO-220F2/TO-263/TO-3P

3

V

TO-126

3

Base-Emitter

Saturation Voltage

TO-220/TO-220F/TO-220F1

TO-220F2/TO-263/TO-3P

1.5

V

TO-126

1.5

DC Current Gain

10

25

TO-220/TO-220F/TO-220F1

TO-220F2/TO-263/TO-3P

5

8

TO-126

5

Fall Time

0.2

µS



RANK

A

B

C

RANGE

10 ~ 15

15 ~ 20

20 ~ 25