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TIP102L-TN3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 TIP102L-TN3-R
部品情報  NPN EPITAXIAL TRANSISTOR
PDF  4 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TIP102L-TN3-R データシート(HTML) 2 Page - Unisonic Technologies

  TIP102L-TN3-R Datasheet HTML 1Page - Unisonic Technologies TIP102L-TN3-R Datasheet HTML 2Page - Unisonic Technologies TIP102L-TN3-R Datasheet HTML 3Page - Unisonic Technologies TIP102L-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
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TIP102
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R209-025.B
ABSOLUTE MAXIMUM RATING (T
C=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
8
A
Pulse
ICP
15
A
Base Current
DC
IB
1
A
Collector Power Dissipation
TO-220
PC
80
W
TO-252
41
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Emitter Sustaining Voltage
VCEO(SUS)
IC=30mA, IB=0A
100
V
Collector-Base Cut-Off Current
ICBO
VCB=100V, IE=0A
50
µA
Collector-Emitter Cut-Off Current
ICEO
VCE=50V, IB=0A
50
µA
Emitter-Base Cut-Off Current
IEBO
VEB=5V, IC=0A
2
mA
ON CHARACTERISTICS
DC Current Gain
hFE1
VCE=4V, IC=3A
1000
20000
hFE2
VCE=4V, IC=8A
200
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB=6mA
2
V
IC=8A, IB=80mA
2.5
V
Base-Emitter ON Voltage
VBE(ON)
VCE=4V, IC=8A
2.8
V
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
COB
VCB=10V, IE=0A, f=0.1MHZ
300
pF



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