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TIP122-TN3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 TIP122-TN3-R
部品情報  NPN EPITAXIAL TRANSISTOR
PDF  4 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TIP122-TN3-R データシート(HTML) 2 Page - Unisonic Technologies

  TIP122-TN3-R Datasheet HTML 1Page - Unisonic Technologies TIP122-TN3-R Datasheet HTML 2Page - Unisonic Technologies TIP122-TN3-R Datasheet HTML 3Page - Unisonic Technologies TIP122-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
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TIP122
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R204-016.E
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
5
V
IC Collector Current
IC
5
A
Power Dissipation (TC=25°C)
TO-126
PD
36
W
TO-220
65
W
TO-220F
34
W
TO-252
38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=100mA
100
V
Collector-Emitter Saturation Voltage
VCE(SAT)1
IC=3A, IB=12mA
2
V
Collector-Emitter Saturation Voltage
VCE(SAT)2
IC=5A, IB=20mA
4
V
Base-Emitter Saturation Voltage
VBE(ON)
VCE=3V, IC=3A
2.5
V
Collector Cut-Off Current
ICBO
VCB=100V
200
uA
Collector-Cut-Off Current
ICEO
VCE=50V
500
uA
Emitter Cut-Off Current
IEBO
VEB=5V
2
mA
DC Current Gain
hFE
IC=500mA, VCE=3V
1000
IC=3A, VCE=3V
1000



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