DTA114T

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

www.unisonic.com.tw

QW-R206-061.D



PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

Collector Power Dissipation

SOT-23

200

mW

SOT-323/SOT-523

150

TO-92

625

TO-92SP

550

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

-50

V

Collector-Emitter Breakdown Voltage

-50

V

Emitter-Base Breakdown Voltage

-5

V

Collector-Emitter Saturation Voltage

-0.3

V

Collector Cutoff Current

-0.5

μA

Emitter Cutoff Current

-0.5

μA

ON CHARACTERISTICS

DC Current Gain

100

250

600

SMALL SIGNAL CHARACTERISTICS

Input Resistance

7

10

13

kΩ

Transition Frequency

250

MHz

Note: Transition frequency of the device