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DTC115TG-AE3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 DTC115TG-AE3-R
部品情報  NPN DIGITAL TRANSISTOR
PDF  3 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTC115TG-AE3-R データシート(HTML) 2 Page - Unisonic Technologies

  DTC115TG-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTC115TG-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTC115TG-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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MPSH10A
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-065.C
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3
V
Total Power Dissipation
PC
350
mW
Collector Current
IC
50
mA
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100μA
30
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
25
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10μA
3
V
Collector Cut-Off Current
ICBO
VCB=25V
100
nA
Emitter Cut-Off Current
IEBO
VEB=2V
100
nA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=4mA, IB=400μA
500
mV
Base-Emitter On Voltage
VBE(ON)
VCE=10V, IC=4mA
950
mV
DC Current Gain
hFE
VCE=10V, IC=4mA
60
Output Capacitace
COB
VCB=10V, f=1MHZ
0.7
pF
Current Gain Bandwidth Product
fT
VCE=10V, IC=4mA, f=100MHZ
650
MHZ
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
60-100
90-130
120 -200



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