ISL9V3040D3S

Insulated Gate Bipolar Transistor

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R219-011.F



PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Emitter Breakdown Voltage

450

V

Emitter to Collector Voltage Reverse Battery Condition

30

V

300

mJ

At Starting

170

mJ

21

A

Continuous Collector Current

17

A

Gate to Emitter Voltage Continuous

±10

V

TO-220/TO-263

125

TO-220F

41.6

TO-252

125

W

TO-220/TO-263

1

TO-220F

0.332

TO-252

1

W/°C

Electrostatic Discharge Voltage at 100pF, 1500Ω

ESD

4

kV

Junction Temperature

-40~175

°C

Storage Temperature Range

-40~175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-252

TO-263

1.0

Junction to Case

TO-220F

3.0

°C/W