PUMZ1G-AL6-R datasheet(2/3 Pages) UTC

2 / 3 page

PUMZ1

Preliminary

NPN/PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R218-011.b

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Per Transistor; For The PNP Transistor With Negative Polarity

Collector- Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current (DC)

100

Peak Collector Current

ICM

200

Total Power Dissipation

300

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Device mounted on an FR4 printed-circuit board.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

416

K/W

Note: Device mounted on an FR4 printed-circuit board.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Per Transistor; For The PNP Transistor With Negative Polarity

Collect Cut-off Current

ICBO

VCB =30V, IE =0

100

VCB =30V, IE =0, TJ =150°C

μA

Emitter Cut-off Current

IEBO

VEB =4V, IC =0

100

DC Current Gain

hFE

VCE =6V, IC =1mA

120

Collector-Emitter Saturation Voltage(Note)

VCE(SAT)

IC =50mA, IB =5mA

200

Collector Capacitance

TR1

IE =ie =0; VCB =12V; f =1MHz

1.5

TR2

2.2

Transition Frequency

VCE =12V, IC =2mA, f =100MHz

100

MHz

Note: Pulse test: tP ≤ 300 μs; δ ≤ 0.02.

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