UT2312G-AE3-R datasheet(1/3 Pages) UTC

部品番号	UT2312G-AE3-R

部品情報	N-CHANNEL ENHANCEMENT MODE MOSFET

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT2312

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-205.F

5A, 20V N-CHANNEL

ENHANCEMENT MODE MOSFET



DESCRIPTION

The UT2312 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.



FEATURES

* RDS(ON) < 33 mΩ @ VGS =4.5V, ID =5.0 A

* RDS(ON) < 40 mΩ @ VGS =2.5 V, ID =4.0 A

* Advanced trench process technology

* Excellent thermal and electrical capabilities

* High density cell design for ultra low on-resistance



SYMBOL

2.Gate

1.Source

3.Drain



ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UT2312G-AE3-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

同様の部品番号 - UT2312G-AE3-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UT2312G-AE3-R	161Kb / 3P	20V N-CHANNEL ENHANCEMENT MODE MOSFET

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