UT3419G-AE3-R datasheet(1/4 Pages) UTC

部品番号	UT3419G-AE3-R

部品情報	ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT3419

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-391.F

20V, 3.5A P-CHANNEL

ENHANCEMENT MODE FIELD

EFFECT TRANSISTOR



DESCRIPTION

The UTC UT3419 is a P-channel enhancement MOSFET

providing designers with excellent RDS(ON), low gate charge. The

gate voltage is as low as 2.5V.

The UTC UT3419 can be applied in PWM applications or used

as a load switch.



FEATURES

* RDS(ON) < 75mΩ (VGS = -10V)

RDS(ON) < 95mΩ (VGS = -4.5V)

RDS(ON) < 145mΩ (VGS = -2.5V)



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

UT3419G-AE2-R

SOT-23-3

S

G

D

Tape Reel

UT3419G-AE3-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: S: Source

G: Gate

D: Drain



MARKING

34VG

同様の部品番号 - UT3419G-AE3-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UT3419G-AE3-R	145Kb / 3P	20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VBsemi Electronics Co.,...	UT3419G-AE3-R	472Kb / 9P	P-Channel 20-V (D-S) MOSFET

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