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UML2502L-AE3-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 UML2502L-AE3-R
部品情報  N-CHANNEL POWER MOSFET
PDF  4 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UML2502L-AE3-R データシート(HTML) 2 Page - Unisonic Technologies

  UML2502L-AE3-R Datasheet HTML 1Page - Unisonic Technologies UML2502L-AE3-R Datasheet HTML 2Page - Unisonic Technologies UML2502L-AE3-R Datasheet HTML 3Page - Unisonic Technologies UML2502L-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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UML2502
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-227.B
ABSOLUTE MAXIMUM RATINGS (TA =25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current VGS=4.5V
ID
4.2
A
Pulsed Drain Current (Note 2)
IDM
33
A
1.25
W
Maximum Power Dissipation
Linear Derating Factor
PD
0.01
W/℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: 1.
2.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
75 ~ 100
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
20
V
Drain-Source Leakage Current
IDSS
VGS=0V, VDS=16V
1.0
µA
Gate-Source Leakage Current
IGSS
VGS=±12V, VDS=0V
±100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25 ,
℃
ID=1mA
0.01
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
0.6
1.2
V
VGS=4.5V, ID=4.2A
35
45
Drain-Source On-State Resistance (Note)
RDS(ON)
VGS=2.5V, ID=3.6A
50
80
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
740
pF
Output Capacitance
COSS
90
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=15V,
f=1.0MHz
66
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
tD(ON)
7.5
ns
Turn-ON Rise Time
tR
10
ns
Turn-OFF Delay Time
tD(OFF)
54
ns
Turn-OFF Fall-Time
tF
VDS=10V, RG=6Ω, RD=10Ω,
ID=1.0A
26
ns
Total Gate Charge (Note)
QG
8.0
12
nC
Gate Source Charge
QGS
1.8
2.7
nC
Gate Drain Charge
QGD
VGS=5.0V, VDS=10V,
ID=4.0A
1.7
2.6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=1.3A, TJ=25℃
(Note)
1.2
V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
33
A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.3
A
Reverse Recovery Time
tRR
16
24
ns
Reverse Recovery Charge
QRR
IF=1.3A, dI/dt=100A/μs,
TJ=25℃ (Note)
8.6
13
nC
Notes: Pulse width ≤ 300μs; duty cycle ≤ 2%.



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