UT3409G-AE3-R datasheet(1/4 Pages) UTC

部品番号	UT3409G-AE3-R

部品情報	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT3409

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-244.E

P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UTC UT3409 uses advanced trench technology to provide

excellent RDS(ON) and low gate charge. This device is suitable for use

as a load switch or in PWM applications.



FEATURES

* RDS(ON) <130mΩ @VGS = -10V

* RDS(ON) < 200mΩ @VGS = -4.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

UT3409G-AE2-R

SOT-23-3

S

G

D

Tape Reel

UT3409G-AE3-R

SOT-23

S

G

D

Tape Reel

UT3409G-AL3-R

SOT-323

S

G

D

Tape Reel

Note: Pin Assignment: S: Source

G: Gate

D: Drain



MARKING

同様の部品番号 - UT3409G-AE3-R

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