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UT4430 データシート(PDF) 1 Page - Unisonic Technologies |
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UT4430 データシート(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4430 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-333.C N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=18A (VGS = 10V) * RDS(ON) < 5.5mΩ @ VGS=10V, ID=18A * RDS(ON) < 7.5mΩ @ VGS=4.5V, ID=15A SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 456 7 8 UT4430G-S08-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
同様の部品番号 - UT4430_15 |
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同様の説明 - UT4430_15 |
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