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UTD413L-TND-R データシート(PDF) 2 Page - Unisonic Technologies

部品番号 UTD413L-TND-R
部品情報  P-CHANNEL ENHANCEMENT MOSFET
PDF  4 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTD413L-TND-R データシート(HTML) 2 Page - Unisonic Technologies

  UTD413L-TND-R Datasheet HTML 1Page - Unisonic Technologies UTD413L-TND-R Datasheet HTML 2Page - Unisonic Technologies UTD413L-TND-R Datasheet HTML 3Page - Unisonic Technologies UTD413L-TND-R Datasheet HTML 4Page - Unisonic Technologies  
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UTD413
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-246.F
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-12
A
Pulsed Drain Current
IDM
-30
A
Avalanche Current
IAR
-12
A
Repetitive avalanche energy L=0.1mH
EAR
30
mJ
Power Dissipation
SOT-223
PD
0.78
W
TO-252/TO-252D
2.5
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
SOT-223
θJA
160
°C/W
TO-252/TO-252D
50
°C/W
Junction to Case
SOT-223
θJC
12
°C/W
TO-252/TO-252D
3
°C/W
Note: When surface mounted to an FR4 board using minimum recommended pad size. (Cu. Area 0.412 sq in),
Steady State.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-10mA
-40
V
Drain-Source Leakage Current
IDSS
VDS=-32V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-1.9
-3
V
On State Drain Current
ID(ON)
VDS=-5V, VGS=-10V
-30
A
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-12A
36
45
mΩ
VGS=-4.5V, ID=-8 A
51
69
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-20V, VGS =0V, f=1MHz
657
pF
Output Capacitance
COSS
143
pF
Reverse Transfer Capacitance
CRSS
63
pF
SWITCHING PARAMETERS
Total Gate Charge
10V
QG
VDS=-20V, VGS=-10V,
ID =-12A
14.1
nC
4.5V
7
Gate Source Charge
QGS
2.2
nC
Gate Drain Charge
QGD
4.1
nC
Turn-ON Delay Time
tD(ON)
VGS=-10V, VDS=-20V,
RL=1.7Ω, RG=3Ω
8
ns
Turn-ON Rise Time
tR
12.2
ns
Turn-OFF Delay Time
tD(OFF)
24
ns
Turn-OFF Fall-Time
tF
12.5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-12A, VGS=0V
-0.75
-1.2
V
Maximum Body-Diode Continuous Current
IS
-12
A
Body Diode Reverse Recovery Time
tRR
IF=-12A, dI/dt=100A/μs
23.2
ns
Body Diode Reverse Recovery Charge
QRR
IF=-12A, dI/dt=100A/μs
18.2
nC



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