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UTD484G-TN3-R データシート(PDF) 1 Page - Unisonic Technologies |
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UTD484G-TN3-R データシート(HTML) 1 Page - Unisonic Technologies |
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1 / 8 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-207.E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2345 6 7 8 UTD484L-TN3-T UTD484G-TN3-T TO-252 G D S - - - - - Tube UTD484L-TN3-R UTD484G-TN3-R TO-252 G D S - - - - - Tape Reel - UTD484G-K08-3030-R DFN-8(3×3) S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
同様の部品番号 - UTD484G-TN3-R |
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同様の説明 - UTD484G-TN3-R |
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