UD606

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 11

www.unisonic.com.tw

QW-R502-169.C



N-Channel:

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note3)

8

A

Pulsed Drain Current (Note3)

30

A

Power Dissipation

TO-252-5

2

W

SOP-8

1.25

W

Junction Temperature

+175

°C

Storage Temperature

-55 ~ +175

°C

P-Channel:

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note3)

-8

A

Pulsed Drain Current (Note3)

-30

A

Power Dissipation

TO-252-5

2

W

SOP-8

1.25

W

Power Dissipation

2.5

W

Junction Temperature

+175

°C

Storage Temperature

-55 ~ +175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

N-Channel

TO-252-5

50

60

°C/W

SOP-8

70

100

°C/W

P-Channel

TO-252-5

40

50

°C/W

SOP-8

68

100

°C/W