2N65L

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-580.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Continuous

2.0

A

Drain Current

Pulsed (Note 2)

8.0

A

Single Pulsed (Note 3)

140

mJ

Avalanche Energy

Repetitive (Note 2)

4.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

54

W

TO-220F/TO-220F1

23

W

Power Dissipation

TO-251/TO-251L/TO-252

TO-252D

44

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F/TO-220F1

62.5

°С/W

Junction to Ambient

TO-251/TO-251L/TO-252

TO-252D

100

°С/W

TO-220

2.32

°С/W

TO-220F/TO-220F1

5.5

°С/W

Junction to Case

TO-251/TO-251L/TO-252

TO-252D

2.87

°С/W