4N50

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-525.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Drain Current

4

A

Pulsed (Note 3)

16 (Note 2)

A

Avalanche Current (Note 3)

4

A

Avalanche Energy

Single Pulsed (Note 4)

216

mJ

Repetitive (Note 3)

8.5

mJ

Peak Diode Recovery dv/dt (Note 5)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

85

W

TO-220F

28

TO-251/TO-252

52

Derate above 25°C

TO-220

0.67

W/°C

TO-220F

0.22

TO-251/TO-252

0.41

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-220F

62.5

TO-251/TO-252

110

Junction to Case

TO-220

1.47

°C/W

TO-220F

4.5

TO-251/TO-252

2.4