UT2N10G-AA3-R datasheet(1/4 Pages) UTC

1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT2N10

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-511.F

2 Amps,100 Volts

N-CHANNEL POWER MOSFET



DESCRIPTION

The UTC UT2N10 is N-Channel enhancement mode silicon gate

power FET.it uses a special gate oxide designed to provide full rated

conductance at gate biases through 3V ~ 5V and facilitate true on-off

power control directly from logic circuit supply voltages.

The UTC UT2N10 is universally applied in logic level (5V) driving

sources, such as automotive switching, solenoid drivers and

programmable controllers.



FEATURES

* RDS(ON) < 1.050Ω @ VGS=5V, ID=2A

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* Compatible with Automotive Drive Requirements

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

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SYMBOL

同様の部品番号 - UT2N10G-AA3-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UT2N10G-TN3-R	150Kb / 3P	2 Amps,100 Volts N-CHANNEL POWER MOSFET

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