UT100N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-193.H



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

100

A

Pulsed Drain Current (Note 2)

400

A

Single Pulsed Avalanche Current (Note 3)

35

A

Single Pulsed Avalanche Energy (Note 3)

875

mJ

TO-220/TO-263

100

TO-220F

36

TO-251/TO-252

TO-252D

50

Power Dissipation

DFN-8(5×6)

21

W

Junction Temperature

+175

°С

Strong Temperature

-55 ~ +175

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-263

62.5

TO-251/TO-252

TO-252D

110

Junction to Ambient

DFN-8(5×6)

40.3 (Note 1, 2)

°С/W

TO-220/TO-263

1.5

TO-220F

3.47

TO-251/TO-252

TO-252D

3

Junction to Case

DFN-8(5×6)

6 (Note 1, 2)

°С/W

Notes: 1. Maximum under Steady State conditions is 90 °C/W.

2. Surface Mounted on 1" x 1" FR4 board.