UT4232G-S08-R datasheet(1/3 Pages) UTC

部品番号	UT4232G-S08-R

部品情報	N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	3 Pages

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT4232

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-337.b

N-CHANNEL ENHANCEMENT

MODE POWER MOSFET



DESCRIPTION

The UT4232 uses UTC advanced technology to provide

excellent RDS(ON), low gate charge and to be operated with low gate

voltages. This device is suitable for applications, such as high-side

DC/DC conversion, notebook and sever.



FEATURES

* VDS(V)=30V

* ID=7A (VGS = 10V)

* RDS(ON) < 22mΩ @ VGS=10 V, ID=7 A

* RDS(ON) < 32mΩ @ VGS=4.5 V, ID=5 A



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

12

3

456

7

8

UT4232G-S08-R

SOP-8

S1 G1 S2 G2 D2 D2 D1 D1

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

同様の部品番号 - UT4232G-S08-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UT4232G-S08-R	150Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SHENZHEN DOINGTER SEMIC...	UT4232G-S08-R	1Mb / 4P	Dual N-Channel MOSFET uses advanced trench technology

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