UT4957

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R50-279.B



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-7.7

A

Pulsed Drain Current (Note 2)

-30

A

Power Dissipation

2

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction-to-Ambient

62.5

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Breakdown Voltage Temperature

Coefficient

-0.02

V/°C

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

Static Drain-Source On-Resistance

(Note)

20

24

mΩ

30

36

DYNAMIC PARAMETERS

Input Capacitance

1670 2670

pF

Output Capacitance

530

pF

Reverse Transfer Capacitance

435

pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note)

14

ns

Turn-ON Rise Time

11

ns

Turn-OFF Delay Time

38

ns

Turn-OFF Fall-Time

25

ns

Total Gate Charge (Note)

27

45

nC

Gate Source Charge

5

nC

Gate Drain Charge

18

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

-1.2

V

Body Diode Reverse Recovery Time

35

ns

Body Diode Reverse Recovery

Charge

34

nC

Note: Pulse width <300us , duty cycle <2%.