UT6898G-S08-R datasheet(1/5 Pages) UTC

部品番号	UT6898G-S08-R

部品情報	N-CHANNEL ENHANCEMENT

PDF	5 Pages

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT6898

Power MOSFET

www.unisonic.com.tw

1 of 5

QW-R502-239.B

N-CHANNEL ENHANCEMENT



DESCRIPTION

The UT6898 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.



FEATURES

* RDS(ON)<18 mΩ @ VGS=4.5V, ID=9.4A

* RDS(ON)<14 mΩ @ VGS=2.5V, ID=8.3A

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL

(7) (8)

D1

(4)

G2

(2)

G1

S1

(1)

S2

(3)

(5) (6)

D2



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

12

3

4

56

7

8

UT6898G-S08-R

SOP-8

S

G

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source

同様の部品番号 - UT6898G-S08-R

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SHENZHEN DOINGTER SEMIC...	UT6898G-S08-R	1Mb / 4P	Dual N-Channel MOSFET uses advanced trench technology

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