2N65K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-B04.E

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Continuous

2.0

A

Drain Current

Pulsed (Note 2)

8.0

A

Avalanche Energy

Single Pulsed (Note 3)

110

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

54

TO-220F/TO-220F1

TO-220F3

21

TO-220F2

23

Power Dissipation

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

44

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

Junction to Ambient

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

100

°C/W

TO-220

2.32

°C/W

TO-220F/TO-220F1

TO-220F3

5.95

°C/W

TO-220F2

5.43

°C/W

Junction to Case

TO-251/TO-251S

TO-251S2/TO-251S4

TO-252/TO-252D

2.87

°C/W