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4N60L-TQ2-R データシート(PDF) 1 Page - Unisonic Technologies

部品番号 4N60L-TQ2-R
部品情報  N-CHANNEL JUNCTIN SILICON FET
PDF  7 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

4N60L-TQ2-R データシート(HTML) 1 Page - Unisonic Technologies

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UNISONIC TECHNOLOGIES CO., LTD
4N60-E
Power MOSFET
www.unisonic.com.tw
1 of 7
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-970.C
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N60-E is a high voltage power MOSFET
and is designed to have better characteristics, such as
fast switching time, low gate charge, low on-state
resistance
and
have
a
high
rugged
avalanche
characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high RuggednessA
SYMBOL


同様の部品番号 - 4N60L-TQ2-R

メーカー部品番号データシート部品情報
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Unisonic Technologies		 4N60L-TQ2-R UTC-4N60L-TQ2-R Datasheet
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