3N40K-MT

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-011.b



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

±30

V

Drain Current

3

A

Pulsed (Note 2)

12

A

Avalanche Energy

Single Pulsed (Note 3)

290

mJ

Repetitive (Note 2)

3

mJ

Power Dissipation

TO-220

54

W

TO-220F/TO-220F1

TO-220F3

25

W

TO-220F2

26

W

TO-251/TO-252

50

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°С/W

TO-251/TO-252

110

°С/W

Junction to Case

TO-220

2.28

°С/W

TO-220F/TO-220F1

TO-220F3

4.9

°С/W

TO-220F2

4.8

°С/W

TO-251/TO-252

2.5

°С/W