3N90-E

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R205-007.C



PARAMETER

SYMBOL

RATINGS

UNIT

900

V

900

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

3

A

Continuous Drain Current

3

A

Pulsed Drain Current

10

A

Single Pulse Avalanche Energy (Note 3)

100

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

45

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

110

°C/W

Junction to Case

2.77

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

900

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±10

μA

ON CHARACTERISTICS

Gate Threshold Voltage

3.0

4.1

5.0

V

Static Drain-Source On-State Resistance

5.0

6.2

Ω

Forward Transconductance (Note)

2.1

S

DYNAMIC CHARACTERISTICS

Input Capacitance

430

pF

Output Capacitance

47

pF

Reverse Transfer Capacitance

7.7

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

45

ns

Turn-On Rise Time

56

ns

Turn-Off Delay Time

80

ns

Turn-Off Fall Time

52

ns

Total Gate Charge

19.25

nC

Gate-Source Charge

5.3

nC

Gate-Drain Charge

5

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage(Note)

1.6

V

Source-Drain Current

3

A

Source-Drain Current (Pulsed)

12

A

Note: Pulse width=300μs, Duty cycle≦1.5%.