7NM65

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-042.b



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2

A

Continuous

7

A

Drain Current

Pulsed (Note 2)

28

A

Avalanche Energy

Single Pulsed (Note 3)

60

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220F/TO-220F1

48

Power Dissipation

TO-251/TO-252

60

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F/TO-220F1

62.5

Junction to Ambient

TO-251/TO-252

110

°C/W

TO-220F/TO-220F1

2.6

Junction to Case

TO-251/TO-252

2.08

°C/W