UTT30P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-622.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-60

V

-60

V

Gate-Source Voltage

Continuous

±15

V

±25

V

Drain Current

Continuous

-30

A

-19

A

-105

A

Power Dissipation

TO-220

104

W

TO-251/TO-252

39

W

Derate Above 25°C

TO-220

0.83

W/°C

TO-251/TO-252

0.3125

W/°C

Junction Temperature

+175

°C

Storage Temperature

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. When surface mounted to an FR4 board using the minimum recommended pad size.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-251/TO-252

110

°C/W

Junction to Case

TO-220

1.2

°C/W

TO-251/TO-252

3.2

°C/W