SI4904DY datasheet(2/10 Pages) TFUNK

2 / 10 page

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Document Number: 73793

S09-0540-Rev. C, 06-Apr-09

Vishay Siliconix

Si4904DY

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

- 4.8

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID= 250 µA

0.8

2.0

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

100

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V

µA

VDS = 40 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 5 A

0.013

0.016

VGS = 4.5 V, ID = 4 A

0.015

0.019

Forward Transconductanceb

gfs

VDS = 15 V, ID = 5 A

Dynamica

Input Capacitance

Ciss

N-Channel

VDS = 20 V, VGS = 0 V, ID = 1 MHz

2390

Output Capacitance

Coss

270

Reverse Transfer Capacitance

Crss

165

Total Gate Charge

VDS = 20 V, VGS = 10 V, ID = 5 A

N-Channel

VDS = 20 V, VGS = 4.5 V, ID = 5 A

Gate-Source Charge

Qgs

5.5

Gate-Drain Charge

Qgd

9.7

Gate Resistance

f = 1 MHz

2.6

4.0

Turn-On Delay Time

td(on)

N-Channel

VDD = 20 V, RL = 4 Ω

ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Turn-On Delay Time

td(on)

N-Channel

VDD = 20 V, RL =4 Ω

ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

135

Rise Time

117

180

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

2.7

Pulse Diode Forward Currenta

ISM

Body Diode Voltage

VSD

IS = 1.5 A

0.69

1.2

Body Diode Reverse Recovery Time

trr

N-Channel

IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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