SIHFR010 datasheet(2/10 Pages) TFUNK

2 / 10 page

IRFR010, SiHFR010

www.vishay.com

Vishay Siliconix

S13-0167-Rev. B, 04-Feb-13

Document Number: 91420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

110

°C/W

Case-to-Sink

RthCS

-1.7

Maximum Junction-to-Case (Drain)

RthJC

5.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 500

Zero Gate Voltage Drain Current

IDSS

VDS = 50 V, VGS = 0 V

250

μA

VDS = 40 V, VGS = 0 V, TJ = 125 °C

1000

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 4.6 Ab

0.16

0.20



Forward Transconductance

gfs

VDS  50 V, ID = 3.6 A

2.1

3.1

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 10

250

Output Capacitance

Coss

150

Reverse Transfer Capacitance

Crss

-29

Total Gate Charge

VGS = 10 V

ID = 7.3 A, VDS = 40 V,

see fig. 6 and 13b

-6.7

Gate-Source Charge

Qgs

-1.8

2.6

Gate-Drain Charge

Qgd

-3.2

4.8

Turn-On Delay Time

td(on)

VDD = 25 V, ID = 7.3 A,

Rg = 24 , RD = 3.3 , see fig. 10b

-11

Rise Time

-33

Turn-Off Delay Time

td(off)

-12

Fall Time

-23

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contactc

-4.5

Internal Source Inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

8.2

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 8.2 A, VGS = 0 Vb

1.6

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 7.3 A, dI/dt = 100 A/μsb

190

Body Diode Reverse Recovery Charge

Qrr

0.15

0.33

0.78

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

SIHFR010 データシート(PDF) 2 Page - Vishay Telefunken

SIHFR010 データシート(HTML) 2 Page - Vishay Telefunken

Html Pages

1 2 3 4 5 6 7 8 9 10

データシートダウンロード