SIHFZ10 datasheet(7/9 Pages) TFUNK

7 / 9 page

Document Number: 90363

www.vishay.com

S11-0511-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ10, SiHFZ10

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?90363.

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

GS = 10 V

Driver gate drive

D.U.T. l

SD waveform

D.U.T. V

DS waveform

Inductor current

D =

P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

• Driver same type as D.U.T.

• I

SD controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. V

GS = 5 V for logic level devices

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